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| 2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 (Z) 1st. Edition Oct. 1998 Features * Super compact package; (1.4 x 0.8 x 0.59mm) * Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "YH-". 2SC5554 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 9 1.5 20 80 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Symbol I CBO I CEO I EBO hFE Cob Min -- -- -- 50 -- Typ -- -- -- 120 0.6 Max 10 1 10 250 0.9 Unit A mA A V pF Test Conditions VCB = 15V , IE = 0 VCE = 9V , RBE = VEB = 1.5V , IC = 0 VCE = 1V , IC = 5mA VCB = 1V , IE = 0 f = 1MHz Gain bandwidth product Power gain fT PG 3.5 9 7 12 -- -- GHz dB VCE = 1V , IC = 5mA VCE = 1V, IC = 5mA f = 900MHz Noise figure NF -- 1.4 3 dB VCE = 1V, IC = 5mA f = 900MHz 2 2SC5554 Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 160 DC Current Transfer Ratio h FE 200 DC Current Transfer Ratio vs. Collector Current VCE = 1 V 120 80 100 40 0 0 50 100 150 200 1 2 5 10 20 50 100 Ambient Temperature Ta (C) Collector Current I C (mA) (pF) 1.0 Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product f T (GHz) IE = 0 f = 1MHz 10 Gain Bandwidth Product vs. Collector Current VCE = 1 V Collector Output Capacitance Cob 0.8 8 0.6 6 4 0.4 0.2 2 0 0.1 0 1 2 5 10 20 50 100 0.2 0.5 1 2 5 10 Collector to Base Voltage V CB (V) Collector Current I C (mA) 3 2SC5554 Power Gain vs. Collector Current 20 VCE = 1 V 16 Power Gain PG (dB) f = 900MHz Noise Figure NF (dB) 4 5 VCE = 1 V f = 900MHz Noise Figure vs. Collector Current 12 3 8 2 4 1 0 1 0 2 5 10 20 50 100 1 2 5 10 20 50 100 Collector Current I C (mA) Collector Current I C (mA) 20 S21 Parameter vs. Collector Current VCE = 1 V S21 parameter |S 21| 2 (dB) 16 f = 1GHz 12 8 4 0 1 2 5 10 20 50 100 Collector Current I C (mA) 4 2SC5554 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 4 / div. 60 -150 -30 Condition : V CE = 1 V , I C = 5mA 100 to 2000 MHz (100 MHz step) Condition : V CE = 1 V , I C = 5mA 100 to 2000 MHz (100 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.04 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Condition : V CE = 1 V , I C = 5mA 100 to 2000 MHz (100 MHz step) Condition : V CE = 1 V , I C = 5mA 100 to 2000 MHz (100 MHz step) 5 2SC5554 Sparameter (VCE = 1V, IC = 5mA, Zo = 50) S11 f (MHz) MAG 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.715 0.647 0.559 0.501 0.453 0.416 0.393 0.378 0.369 0.357 0.361 0.358 0.358 0.362 0.362 0.369 0.373 0.377 0.388 0.395 ANG -25.4 -50.1 -71.5 -88.2 -102.5 -114.8 -125.4 -134.4 -142.8 -149.5 -156.6 -162.2 -167.5 -172.5 -177.3 178.8 174.7 171.1 168.3 165.3 S21 MAG 13.06 11.47 9.74 8.28 7.08 6.16 5.43 4.84 4.37 3.99 3.66 3.38 3.15 2.96 2.78 2.64 2.50 2.38 2.28 2.18 ANG 161.3 144.2 131.0 121.3 113.7 108.1 103.1 99.3 95.7 92.5 89.7 87.2 84.9 82.7 80.9 78.6 77.2 75.1 73.3 71.8 S12 MAG 0.0279 0.0517 0.0681 0.0798 0.0882 0.0955 0.102 0.109 0.115 0.122 0.128 0.135 0.141 0.148 0.155 0.163 0.169 0.177 0.183 0.191 ANG 76.6 65.6 58.4 54.6 52.4 51.8 51.7 52.1 52.7 53.5 54.2 55.1 56.0 56.9 57.2 58.1 58.8 59.2 59.6 60.1 S22 MAG 0.947 0.828 0.697 0.587 0.501 0.433 0.378 0.333 0.295 0.266 0.240 0.217 0.199 0.180 0.166 0.151 0.137 0.126 0.113 0.102 ANG -16.1 -30.2 -40.4 -47.0 -51.3 -54.3 -56.2 -57.3 -58.0 -58.4 -58.6 -58.5 -58.0 -58.0 -57.2 -56.9 -56.6 -56.4 -56.2 -55.7 6 2SC5554 Package Dimensions As of January, 2001 Unit: mm 0.2 1.4 0.05 1.2 0.05 0.8 0.1 0.2 0.45 0.9 0.1 0.45 0.6 MAX Hitachi Code JEDEC EIAJ Mass (reference value) (0.1) (0.1) 3-0.2 +0.1 -0.05 0.15 +0.1 -0.05 MFPAK -- -- 0.0016 g 7 2SC5554 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 8 This datasheet has been download from: www..com Datasheets for electronics components. |
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